[News] Micron Ships World’s First 1γ-Based LPDDR5X Sample, Marking Industry’s Thinnest Design

As memory giants ramp up their efforts on 10nm-class DRAM, Micron announced on June 3 that it has begun shipping qualification samples of the world’s first LPDDR5X memory based on the 1γ node, aimed at enhancing AI performance in flagship smartphones.

As indicated by ZDNet, the 1γ process marks the sixth generation of 10nm-class DRAM, with mass production expected to ramp up later this year. The node features a linewidth of roughly 11 to 12 nanometers and is commonly referred to as 1c DRAM within South Korea’s semiconductor industry.

ZDNet also points out that LPDDR5X represents the most advanced generation of low-power DRAM currently available on the market, with primary applications in mobile devices.

Micron is currently sampling 1γ-based LPDDR5X 16-gigabyte (GB) products with select partners and plans to offer a full range of capacities—from 8GB to 32GB—for use in 2026 flagship smartphones, according to its press release.

Key Features of Micron’s 1γ-Based LPDDR5X

The press release also states that this LPDDR5X delivers the industry’s fastest speed grade for LPDDR5X at 10.7 gigabits per second (Gbps), along with up to 20% power savings.

To support slimmer smartphone designs, Micron has designed its LPDDR5X memory in the industry’s thinnest package, measuring just 0.61 millimeters. The company says this makes it 6% thinner than competing products and 14% lower in height compared to the previous generation.

Micron states in its press release that the 1γ-based LPDDR5X is its first mobile memory solution to utilize advanced EUV lithography.

In late February 2025, Micron announced in a press release that it had delivered 1γ (gamma) DDR5 samples to customers like Intel and AMD, becoming the first in the memory sector to do so.

Notably, Micron is also the only company shipping both HBM3E and SOCAMM memory for AI servers, according to its press release. Micron notes that its SOCAMM LPDDR5X, developed with NVIDIA, supports the GB300 Grace Blackwell Ultra Superchip.

Samsung and SK hynix Continue 1c DRAM Development

Meanwhile, South Korean rivals Samsung and SK hynix are also accelerating the development of their own 1c DRAM. In August 2024, SK hynix announced in an official release that it had developed the industry’s first 16Gb DDR5 using its 1c node—the sixth generation of the 10nm-class process. According to a MoneyToday report from January 2025, the company has reportedly completed mass production qualification for its 1c DDR5.

In contrast, Samsung has delayed the development of its sixth-generation (1c) 10nm-class DRAM, pushing its target to June 2025, as highlighted by MoneyToday.

Read more

• [News] Micron Pioneers 1γ DDR5 Samples with Reduced EUV Use, But Future Risks Loom
• [News] Micron Races Ahead in 10nm-class DRAM with 1γ DDR5 Samples Delivered to Intel & AMD
• [News] SK hynix Reportedly Set 1c DRAM Mass Production in Feb, While Samsung Delays by Six Months

(Photo credit: Micron)